PART |
Description |
Maker |
ICE2A0565 ICE2B265 |
(ICE2xxxx) Second Generation Integrated Power Ics With Enhanced Protection Features And Lowest Standby
|
Infineon Technologies
|
SY100S838ZCTR SY100S838ZC SY100S838LZITR SY100S838 |
(÷1, ÷2/3) OR (÷2, ÷4/6) CLOCK GENERATION CHIP (1 2/3) OR (2 4/6) CLOCK GENERATION CHIP SMD-RELAY,2FORMC,5V,1A,140MW,S-S STB,10P SOLDER WALL MT RECPT CAP 0.018UF 500V 10% X7R SMD-1210 TR-7 PLATED-NI/SN (±1, ±2/3) OR (±2, ±4/6) CLOCK GENERATION CHIP 100S SERIES, LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20
|
MICREL[Micrel Semiconductor] Micrel Semiconductor,Inc. Micrel Semiconductor, Inc.
|
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
APT15GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT & FRED 600V 30A
|
ADPOW[Advanced Power Technology]
|
SI3233-X-GM SI3233-X-FM SI3201-X-FS SI3201-X-GS SI |
PROSLICPROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38 PROSLIC? PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc. Silicon Laboratories Inc.
|
STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
http:// STMicroelectronics
|
TC514400ASJL-70 TC514400ASJL-80 TC514400AJL-10 TC5 |
70 ns, 4-bit generation dynamic RAM 80 ns, 4-bit generation dynamic RAM 100 ns, 4-bit generation dynamic RAM
|
TOSHIBA
|
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation ADPOW[Advanced Power Technology] Microsemi, Corp.
|
APT60GF120JRD |
Fast IGBT & FRED 1200V 100A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|